rf 01001 , rev . a ( 1/4 /13) ?201 3 microsemi corporation page 1 of 7 m smcg5.0 a C mxl smcg170ca e3 , msmcj5.0 C mxlsmcj170ca e3 available s urface mount 1500 watt transient voltage suppressor screening in reference to mil - prf - 19500 available description the m smc g(j)5.0 a through mxl smc g(j) 170a series of 1500 w att high - reliability transient voltage suppressors (tvss) protects a variety of vol tage - sensitive components. the smcg g ull - wing design in the do - 215ab package allows for visible solder connections. th e smcj j- bend design in the do - 214ab package al lows for greater pc board mounting density. selections include unidirectional and bidirectional as well as rohs c ompliant versions . these are available with a variety of upscreening options for enhanced reliability. they can protect against the secondar y effects of lightning per iec61000 -4- 5 and against voltage pulses from inductive switching environme nts and induced by rf radiation. since their response time is virtually instantaneous, they can also be used in protection from esd and eft per iec61000 -4- 2 and iec61000 -4- 4. do - 215a b (smcg) package do - 21 4ab (smcj) package note: all smc series are equivalent to prior smm package identifications. also available : commercial grade sm cg (j) 5.0 a C sm cg (j) 170 cae3 important: for the latest information, visit our website http://www.microsemi.com . features ? high reliability devices with fabrication and assembly lot traceabi lity. ? all devices are 100 % surge tested. ? 3 lot norm screening performed on s tandby c urrent (i d ). ? available in both unidirectional and bidirectional versions . ? moisture classification is level 1 with no dry pack required per ipc/jedec j - std - 020b. ? enhance d reliability s creening options are available in reference to mil - prf - 19500 . refer to high reliability up - scree ned plastic products portfolio for more details on the screening options. (see part nomenclature for all available options). ? rohs compliant versions available . ? axial - lead equivalent packages for thru - hole mount ing are available as 1.5ke6.8a to 1.5ke200ca or 1n6267 thru 1n6303a and 1n5908 (contact microsemi for other surface mount options). applications / benefits ? high - reliability devices. ? selections for 5.0 to 170 volts standoff voltages (v wm ). ? protection from switching transients and induced rf . ? protection from esd, and eft per iec 61000 -4- 2 and iec 61000 -4-4. ? secondary lightning protection per iec61000 -4- 5 with 42 o hms source impedance: class 1: m smc 5.0 a to m xl smc 170a or ca class 2: m sm c 5.0 a to m xl smc 150a or ca class 3: m smc 5.0 a to m xl smc 75a or ca class 4: m smc 5.0 a to m xl smc 36a or ca ? secondary lightning protection per iec61000 -4- 5 with 12 o hms source impedance: class 1 : m smc 5.0 a to m xl smc 90a or ca class 2: m smc 5.0 a to m xl smc 45a or ca class 3: m smc 5.0 a to m xl smc 24a or ca class 4: m smc 5.0 a to m xl smc 11a or ca ? secondary lightning protection per iec61000 -4- 5 with 2 o hms source impedance: class 2: m smc 5.0 a to m xl smc 22a or ca class 3: m smc 5.0 a to m xl smc 10a or ca msc C lawrence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www .microsemi.com downloaded from: http:///
rf 01001 , rev . a ( 1/4 /13) ?201 3 microsemi corporation page 2 of 7 m smcg5.0 a C mxl smcg170ca e3 , msmcj5.0 C mxlsmcj170ca e3 m axim um ratings parameters/test conditions symbol value unit junction and storage temperature t j and t stg - 65 to +150 oc thermal resistance junction - to - lead r ? jl 20 oc /w thermal resistance junction - to - ambient (1) r ? ja 80 oc /w pe ak pulse power d issipation @ 25 oc (at 10/1000 s, see figures 1, 2, and 3 ) p pp 1500 w impulse repetition rate (duty factor) df 0.01 % t clamping (0 volts to v (br) min.) unidirectional bidirectional t clamping <100 <5 ps ns rated average power dissipation t l = +30 oc t a = +25 oc p m(av) 6 1.56 (1) w maximum for w ard surge current (2) i fs m 200 a (pk) solder temperature @ 10 s t sp 260 o c notes : 1. w hen mounted on fr4 pc board (1oz cu) with recommended footprint (see last page ). 2. peak impulse of 8.3 ms half - sine wave at 25 oc (unidirectional only). mechanical and packaging ? case: void - free transfer molded thermosetting epoxy body meeting ul94v -0. ? terminal s: t in - lead or rohs co mplia nt annealed matte - tin plating . s olderable to mil - std - 750, method 2026. ? marking: part number marked on package . ? polarity: cathode indicated by band. no cathode band on bi - directional devices. ? tape & reel option: standar d per eia - 481 - 2 with 1 6 mm tape ( add tr suffix to part number) . consult factory for quantities. ? w eight: approximately 0.25 grams . ? see p ackage d imensions on last page. part nomenclature mx sm c g 5.0 c a e3 reliability level * m ma m x mxl * (see high reliability up - screened plastic products portfolio ) surface mount package 1500 w power l evel gull - wing lead frame g = gull - wing j = j - bend rohs compliance e3 = rohs compliant blank = non - rohs compliant +/ - 5% tolerance level uni/bidirectional c = bidirectional blank = unidirectional reverse stand - off voltage (see electrical characteristics table) downloaded from: http:///
rf 01001 , rev . a ( 1/4 /13) ?201 3 microsemi corporation page 3 of 7 m smcg5.0 a C mxl smcg170ca e3 , msmcj5.0 C mxlsmcj170ca e3 symbols & definitions symbol definition i (br) breakdown current : the current used for measuring b reakdown v oltage v (br) . i d standby current: the current at the rated standoff voltage (v wm ). i f forward current : the forward current dc value, no alternating component. i o average rectified output current: the o utput c urrent averaged over a full cycle with a 50 hz or 60 hz sine - wave input and a 180 degree conduction angle. i pp peak impulse current : the peak current during the impulse. p pp peak pulse power: the peak power dissipation resulting from the peak impulse current i pp . v c clamping voltage: maximum c lamping v oltage at specified i pp (peak pulse current) at the specified pulse conditions. v ( br ) minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current . v wm working peak voltage: the maximum peak voltage that can be applied over the operating temperature range. this is also referred to as s tandoff v oltage. electrical characteristics @ 25 oc unless otherwise stated microsemi part number reverse st and - off voltage v wm volts breakdown voltage v (br) @ i (br) volts maximum clamping voltage @ i pp volts peak pulse current (see fig. 2 ) i pp amps maximum standby current @ v wm i d a gull - w ing j- bend min. max. i (br) ma m smcg5.0a m smcg6.0a msmcj 5.0a msmcj 6.0a 5.0 6.0 6.40 C 7.00 6.67 C 7.37 10 10 9.2 10.3 163.0 145.6 1000 1000 m smcg6.5a m smcg7.0a msmcj 6.5a msmcj 7.0a 6.5 7.0 7.22 C 7.98 7.78 C 8.60 10 10 11.2 12.0 133.9 125.0 500 200 m smcg7.5a m smcg8.0a msmcj 7.5a msmcj 8.0a 7.5 8.0 8.33 C 9.21 8.89 C 9.83 1 1 12.9 13.6 116.3 110.3 100 50 m smcg8.5a m smcg9.0a msmcj 8.5a msmcj 9.0a 8.5 9.0 9.44 C 10.4 10.0 C 1 1.1 1 1 14.4 15.4 104.2 97.4 20 10 m smcg10a m smcg11a msmcj 10a msmcj 11a 10 11 11.1 C 12.3 12.2 C 13.5 1 1 17.0 18.2 88.2 82.4 5 5 m smcg12a m smcg13a msmcj 12a msmcj 13a 12 13 13.3 C 14.7 14.4 C 15.9 1 1 19.9 21.5 75.3 69.7 5 1 m smcg14a m smcg15a msmcj 14a msm cj 15a 14 15 15.6 C 17.2 16.7 C 18.5 1 1 23.2 24.4 64.7 61.5 1 1 m smcg16a m smcg17a msmcj 16a msmcj 17a 16 17 17.8 C 19.7 18.9 C 20.9 1 1 26.0 27.6 57.7 53.3 1 1 m smcg18a m smcg20a msmcj 18a msmcj 20a 18 20 20.0 C 22.1 22.2 C 24.5 1 1 29.2 32.4 51.4 46.3 1 1 m smcg22a m smcg24a msmcj 22a msmcj 24a 22 24 24.4 C 26.9 26.7 C 29.5 1 1 35.5 38.9 42.2 38.6 1 1 m smcg26a m smcg28a msmcj 26a msmcj 28a 26 28 28.9 C 31.9 31.1 C 34.4 1 1 42.1 45.4 35.6 33.0 1 1 m smcg30a m smcg33a msmcj 30a msmcj 33a 30 33 33.3 C 36.8 36.7 C 40.6 1 1 48.4 53.3 31.0 28.1 1 1 m smcg36a m smcg40a msmcj 36a msmcj 40a 36 40 40.0 C 44.2 44.4 C 49.1 1 1 58.1 64.5 25.8 23.2 1 1 m smcg43a m smcg45a msmcj 43a msmcj 45a 43 45 47.8 C 52.8 50.0 C 55.3 1 1 69.4 72.7 21.6 20.6 1 1 m smcg48a m smcg51a msmcj 48a msmcj 51a 48 51 53.3 C 58.9 56.7 C 62.7 1 1 77.4 82.4 19.4 18.2 1 1 m smcg54a m smcg58a msmcj 54a msmcj 58a 54 58 60.0 C 66.3 64.4 C 71.2 1 1 87.1 93.6 17.2 16.0 1 1 m smcg60a m smcg64a msmcj 60a msmcj 64a 60 64 66.7 C 73.7 71.1 C 78.6 1 1 96.8 103.0 15.5 14.6 1 1 m smcg70a m smcg75a msmcj 70a msmcj 75a 70 75 77.8 C 86.0 83.3 C 92.1 1 1 113 121 13.3 12.4 1 1 continued. downloaded from: http:///
rf 01001 , rev . a ( 1/4 /13) ?201 3 microsemi corporation page 4 of 7 m smcg5.0 a C mxl smcg170ca e3 , msmcj5.0 C mxlsmcj170ca e3 electrical characteristics @ 25 oc unless otherwise stated (continued) microsemi part number reverse st and - off voltage v wm volts breakdown voltage v (br) @ i (br) volts maximum clamping voltage @ i pp volts peak pulse current (see fig. 2 ) i pp amps maximum standby current @ v wm i d a gull - w ing j- bend min. max. i (br) ma m smcg78a m smcg85a msmcj 78a msmcj 85a 78 85 86.7 C 95.8 94.4 C 104.0 1 1 126 137 11.4 10.4 1 1 m smcg90a m smcg100a msmcj 90a msmcj 100a 90 100 100 C 111 111 C 123 1 1 146 162 10.3 9.3 1 1 m smcg110a m smcg120a msmcj 110a msmcj 120a 110 120 122 C 135 133 C 147 1 1 177 193 8.4 7.8 1 1 m smcg130a m smcg150a msmcj 130a msmcj 150a 130 150 144 C 159 167 C 185 1 1 209 243 7.2 6.2 1 1 m smcg160a m smcg170a msmcj 160a msmcj 170a 160 170 178 C 197 189 C 209 1 1 259 275 5.8 5.5 1 1 downloaded from: http:///
rf 01001 , rev . a ( 1/4 /13) ?201 3 microsemi corporation page 5 of 7 m smcg5.0 a C mxl smcg170ca e3 , msmcj5.0 C mxlsmcj170ca e3 graphs t C time (msec) tp C pulse time C sec figure 2 C p ulse waveform figure 1 C peak pulse power vs. pulse time t l lead temperature o c b v C breakdown voltage (v) figure 3 C derating curve figure 4 typical capacitance vs. breakdown voltage (unidirectional configuration) note: bidirectional capacitance is half that shown at zero volts. 1 s 10 sec 100 sec 1ms 10ms (p pp ) C peak pulse power - kw (waveform C see figure 2) non - repetitive peak pulse power ( p pp ) or continuous power in percent of 25 o c rating 100 10 1.0 0 i pp C peak pulse current - % i pp c C capacitance (pf) test wave form parameters tr = 10 sec. tp = 1000 sec. downloaded from: http:///
rf 01001 , rev . a ( 1/4 /13) ?201 3 microsemi corporation page 6 of 7 m smcg5.0 a C mxl smcg170ca e3 , msmcj5.0 C mxlsmcj170ca e3 package dimensions note s : dimension e exceeds the jedec outline as shown . typical standoff height: 0.004 C 0.008 (0.1 mm C 0.2 mm). note s : dimension e exceeds the jedec outline in height as shown . typical standoff height: 0.004 C 0.008 (0.1 mm C 0.2 mm). dimensions ltr inch millimeters min max min max a .115 . 121 2.92 3.07 b .26 0 .280 6.60 7.11 c . 220 .245 5.59 6.22 e .077 .1 10 1.95 2.80 f .380 .400 9.65 10.16 k .025 .0 40 0.635 1.016 dimensions ltr inch millimeters min max min max a .115 .121 2.92 3.07 b .260 .280 6.60 7.11 c .220 .245 5.59 6.22 d .305 .320 7.75 8.13 e .077 .110 1.95 2.80 l .030 .060 .760 1.52 smcg (do - 21 5ab) smcj (do- 21 4ab) downloaded from: http:///
rf 01001 , rev . a ( 1/4 /13) ?201 3 microsemi corporation page 7 of 7 m smcg5.0 a C mxl smcg170ca e3 , msmcj5.0 C mxlsmcj170ca e3 pad layout smcg (do - 215ab) ltr inch millimeters a .510 12.95 b .110 2.79 c .150 3.81 smc j (do - 214ab) ltr inch millimeters a . 390 9.90 b .110 2.79 c .150 3.81 downloaded from: http:///
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